IBM unveiled a "dual-gate transistor"

The new transistor will increase the performance of the chips

IBM has developed a new type of transistor that may lead within a few years
For substantial improvements in performance and current consumption in computer systems.
Transistors are known to be the building blocks of all microelectronics components.
A "dual gate transistor," as the new component is called, can carry
Twice the electric charge and operate at twice the rate of what is found today while being smaller
Its physical size is below all known now. Until now it was believed that all the little ones
Additional of accepted transistors, will soon encounter legal limitations
Physics - which means slowing down the pace of miniaturization and the development of new systems.

IBM's technological breakthrough is based on technological innovations
Predecessors of science - chief among them the silicon on insulator (SOI),
Now adopted by leading manufacturers. The use and expertise in the field
The silicon on top of an insulator allows transistors to be designed in structures that are not
It was possible in the past to continue producing the entire chip in production lines
conventional.

New works by IBM scientists in the field of silicon on an insulator
and the double-gate transistor, were presented in over twenty articles
scientists at the International Conference of Electronic Component Manufacturers (IEDM) that took place
in Washington.

As we know, the performance of each chip depends on the rate at which millions are capable
The transistors integrated in it go from the "open" state to the "closed" state within
Minimal investment of energy in this transition. The "gate" component in all
transistor, controls the flow of electricity through this transistor. As much as
As the transistors get smaller and smaller it is harder for a single gate to control
in all branding tasks. In the double-gate transistor, which she developed
IBM, the channel is surrounded by two gates - which allow doubling the control of the flow,
And managing the entire circuit faster and with lower voltage consumption.

With the current announcement, IBM is moving the work on the Baal transistor
The double gate from the pure theoretical level - to the technology category
The lessons about the possibility of practical use of the chips of the future. IBM managed to solve
Some of the problems that thwarted attempts at similar developments, and at the center of them - leakage
voltage, high current consumption, and electrical flow disturbances. technology
IBM's dual-gate transistor solves many of these problems,
For the first time in the world - and brings the idea closer than ever to realization in production
in practice.

Other innovations that IBM presented at the conference in Washington include
A transistor operating at 2 terahertz; The smallest SRAM cell
ever, in an area of ​​1.8 square microns; Image decoder in technology
Silicon on Insulator (SOI) for optical communication tasks as well as research
which provides the first proof that transistors built from nanotubes
Carbon (molecules in which carbon atoms form a "tube" structure)
can offer better performance than silicon transistors.
Another study by IBM states that the theoretical speed to which they can
Transistors reach ranges around 30 terahertz (30 thousand gigahertz,
compared to about two gigahertz in the chips currently sold in personal computers) and Dan
On the way to get closer to these areas.

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